Mitsuhisa IKEDA


Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Yuto FUTAMURA Katsunori MAKIHARA Akio OHTA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 458-461
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dotsGe coreelectron field emissionmultiple-stacked structureelectric field concentration
 Summary | Full Text:PDF

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 468-474
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memories (ReRAMs)Ti-nanodots (NDs)Si-rich oxide (SiOx)
 Summary | Full Text:PDF

Selective Growth of Self-Assembling Si and SiGe Quantum Dots
Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 393-396
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
self-assembling Si quantum dotsselective growthlow pressure chemical vapor deposition
 Summary | Full Text:PDF

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy
Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 397-400
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si nano-columnar structureAFMcurrent imageelectron emission
 Summary | Full Text:PDF

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 702-707
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Si oxidePt electrodeschemical bonding featuresresistance switching
 Summary | Full Text:PDF

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures
Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 694-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon quantum dotsilicide nanodothybrid floating gateoptical response
 Summary | Full Text:PDF

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy
Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 718-721
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si nanocolumnar structureAFMcurrent imageelectron emission
 Summary | Full Text:PDF

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamicscollective motion of electronSi-nano dottwo-dimensional electron gastunnelingSi-nano dot type floating gate MOS capacitor
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Katsunori MAKIHARA Mitsuhisa IKEDA Akira KAWANAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 569-572
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
Si quantum dotsrandom telegraph signalsAFM/KFM
 Summary | Full Text:PDF

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Kazuhiro SHIMANOE Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 616-619
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Pd nanodotremote hydrogen plasmafloating gate MOS memory
 Summary | Full Text:PDF

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM
Katsunori MAKIHARA Mitsuhisa IKEDA Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 712-715
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dotsAFM/KFM
 Summary | Full Text:PDF

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 709-712
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
Keyword: 
silicon quantum dotMOS memoryfloating gateCoulomb blockade
 Summary | Full Text:PDF