IEICE Trans

Mitiko MIURA-MATTAUSCH

Prediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model Kenshiro SATO Dondee NAVARRO Shinya SEKIZAKI Yoshifumi ZOKA Naoto YORINO Hans Jürgen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: Publication Date: 2020/03/01 Vol. E103-C No. 3 pp. 119-126 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: compact model, DC-AC converter, device aging, efficiency, SiC-MOSFET,
	Summary \| Full Text:PDF(1.8MB)

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs Arnab MUKHOPADHYAY Tapas Kumar MAITI Sandip BHATTACHARYA Takahiro IIZUKA Hideyuki KIKUCHIHARA Mitiko MIURA-MATTAUSCH Hafizur RAHAMAN Sadayuki YOSHITOMI Dondee NAVARRO Hans Jürgen MATTAUSCH
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 487-494 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOSFET, optimization, power efficient circuit design, CMOS, short-channel effect, transit delays,
	Summary \| Full Text:PDF(1.9MB)

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH
Publication: Publication Date: 2017/03/01 Vol. E100-C No. 3 pp. 321-328 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: power, GaN-HEMTs, HiSIM, field plate, capacitance,
	Summary \| Full Text:PDF(972.9KB)

Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters Atsushi SAITO Kenshiro SATO Yuta TANIMOTO Kai MATSUURA Yutaka SASAKI Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH Yoshifumi ZOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/09/01 Vol. E99-C No. 9 pp. 1065-1070 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: circuit simulation, compact model, DC/DC converter, SiC-MOSFET, optimization, conversion efficiency,
	Summary \| Full Text:PDF(1007.8KB)

Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump Lei CHEN Tapas Kumar MAITI Hidenori MIYAMOTO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2016/04/01 Vol. E99-A No. 4 pp. 798-805 Type of Manuscript: PAPER Category: Systems and Control Keyword: organic actuator, organic thin-film transistor, organic circuit, HiSIM-organic model, circuit simulation, fluid volume, artificial lung,
	Summary \| Full Text:PDF(2.3MB)

Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency Takao YAMAMOTO Masataka MIYAKE Uwe FELDMANN Hans JÜRGEN MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/10/01 Vol. E97-C No. 10 pp. 1021-1027 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: IGBT, HiSIM, SPICE, compact model,
	Summary \| Full Text:PDF(1.4MB)

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions Chenyue MA Hans Jürgen MATTAUSCH Masataka MIYAKE Takahiro IIZUKA Kazuya MATSUZAWA Seiichiro YAMAGUCHI Teruhiko HOSHIDA Akinori KINOSHITA Takahiko ARAKAWA Jin HE Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/10/01 Vol. E96-C No. 10 pp. 1339-1347 Type of Manuscript: PAPER Category: Electronic Components Keyword: NBTI effect, interface-state, hole-trapping, modeling,
	Summary \| Full Text:PDF(3.6MB)

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 744-751 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-voltage MOSFET, LDMOS, HiSIM, trench-gate MOSFET compact model,
	Summary \| Full Text:PDF(2.7MB)

Compact Modeling of Expansion Effects in LDMOS Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/11/01 Vol. E95-C No. 11 pp. 1817-1823 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential,
	Summary \| Full Text:PDF(2.7MB)

Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions Masataka MIYAKE Junichi NAKASHIMA Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/10/01 Vol. E95-C No. 10 pp. 1682-1688 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-level injection, p-i-n diode, reverse recovery, carrier distribution, compact model, circuit simulation, SPICE,
	Summary \| Full Text:PDF(1.8MB)

Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design Norio SADACHIKA Shu MIMURA Akihiro YUMISAKI Kou JOHGUCHI Akihiro KAYA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/03/01 Vol. E94-C No. 3 pp. 361-367 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: circuit simulation, compact model, DFM, reliability,
	Summary \| Full Text:PDF(1.3MB)

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/06/01 Vol. E92-C No. 6 pp. 777-784 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: accumulation-mode, MOS varactor, carrier-transit delay, nonquasi-static effect, compact model, surface potential, circuit simulation, LC-VCO, frequency-tuning range, FTR, oscillation amplitude,
	Summary \| Full Text:PDF(823.2KB)

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 608-615 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation,
	Summary \| Full Text:PDF(1.7MB)

A PN Junction-Current Model for Advanced MOSFET Technologies Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2009/04/01 Vol. E92-A No. 4 pp. 983-989 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa) Category: Keyword: HiSIM, PN junction current, diode current, surface potential,
	Summary \| Full Text:PDF(973.9KB)

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/08/01 Vol. E91-C No. 8 pp. 1379-1381 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: double gate MOSFET, HiSIM, circuit simulation, volume inversion,
	Summary \| Full Text:PDF(206.6KB)

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 885-894 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOSFET, shot noise, high frequency noise, device simulation, sub-threshold current,
	Summary \| Full Text:PDF(712.4KB)

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential Dondee NAVARRO Takeshi MIZOGUCHI Masami SUETAKE Kazuya HISAMITSU Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 pp. 1079-1086 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: pinch-off region, channel-length modulation, overlap capacitance, surface-potential-based modeling, circuit simulation,
	Summary \| Full Text:PDF(1MB)

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/02/01 Vol. E88-C No. 2 pp. 247-254 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: 100 nm-MOSFET, 1/f noise, measurement, modeling,
	Summary \| Full Text:PDF(438.8KB)

100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Keiichi MORIKAWA Satoshi ITOH Akiyoshi KOBAYASHI Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/06/01 Vol. E86-C No. 6 pp. 1009-1021 Type of Manuscript: INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems) Category: Keyword: MOSFET model, surface potential, device phenomena, RF applications,
	Summary \| Full Text:PDF(1.6MB)

FOREWORD Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 pp. 255-255 Type of Manuscript: FOREWORD Category: Keyword:
	Summary \| Full Text:PDF(1.1MB)

Circuit-Simulation Model of C_gd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients Dondee NAVARRO Hiroaki KAWANO Kazuya HISAMITSU Takatoshi YAMAOKA Masayasu TANAKA Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 pp. 474-480 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: gate-drain capacitance, surface-potential based modeling, lateral field gradient, pocket-implant technology,
	Summary \| Full Text:PDF(1MB)

Circuit Simulation Models for Coming MOSFET Generations Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2002/04/01 Vol. E85-A No. 4 pp. 740-748 Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa) Category: Keyword: MOSFET model, surface potential, charge based modeling, sub-100 nm technology,
	Summary \| Full Text:PDF(483.7KB)

FOREWORD Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 pp. 789-790 Type of Manuscript: FOREWORD Category: Keyword:
	Summary \| Full Text:PDF(171.5KB)

Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations Odin PRIGGE Masami SUETAKE Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 pp. 997-1002 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: MOSFET, performance distribution 2σ, analytical model,
	Summary \| Full Text:PDF(739KB)

Unified MOSFET Model for All Channel Lengths down to Quarter Micron Mitiko MIURA-MATTAUSCH Ulrich WEINERT
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 pp. 172-180 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: analytical MOSFET model, short-channel effects, charge-sheet model, parameter extracion,
	Summary \| Full Text:PDF(678KB)