Mitiko MIURA-MATTAUSCH


Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
Arnab MUKHOPADHYAY Tapas Kumar MAITI Sandip BHATTACHARYA Takahiro IIZUKA Hideyuki KIKUCHIHARA Mitiko MIURA-MATTAUSCH Hafizur RAHAMAN Sadayuki YOSHITOMI Dondee NAVARRO Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 487-494
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFEToptimizationpower efficient circuit designCMOSshort-channel effecttransit delays
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Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2017/03/01
Vol. E100-C  No. 3  pp. 321-328
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
powerGaN-HEMTsHiSIMfield platecapacitance
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Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters
Atsushi SAITO Kenshiro SATO Yuta TANIMOTO Kai MATSUURA Yutaka SASAKI Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH Yoshifumi ZOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/09/01
Vol. E99-C  No. 9  pp. 1065-1070
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
circuit simulationcompact modelDC/DC converterSiC-MOSFEToptimizationconversion efficiency
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Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump
Lei CHEN Tapas Kumar MAITI Hidenori MIYAMOTO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2016/04/01
Vol. E99-A  No. 4  pp. 798-805
Type of Manuscript:  PAPER
Category: Systems and Control
Keyword: 
organic actuatororganic thin-film transistororganic circuitHiSIM-organic modelcircuit simulationfluid volumeartificial lung
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Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency
Takao YAMAMOTO Masataka MIYAKE Uwe FELDMANN Hans JÜRGEN MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10  pp. 1021-1027
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
IGBTHiSIMSPICEcompact model
 Summary | Full Text:PDF

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions
Chenyue MA Hans Jürgen MATTAUSCH Masataka MIYAKE Takahiro IIZUKA Kazuya MATSUZAWA Seiichiro YAMAGUCHI Teruhiko HOSHIDA Akinori KINOSHITA Takahiko ARAKAWA Jin HE Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Vol. E96-C  No. 10  pp. 1339-1347
Type of Manuscript:  PAPER
Category: Electronic Components
Keyword: 
NBTI effectinterface-statehole-trappingmodeling
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Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 744-751
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETLDMOSHiSIMtrench-gate MOSFET compact model
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Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11  pp. 1817-1823
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETsbreakdownhigh-electric-field phenomenacompact modelsurface potential
 Summary | Full Text:PDF

Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
Masataka MIYAKE Junichi NAKASHIMA Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10  pp. 1682-1688
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-level injectionp-i-n diodereverse recoverycarrier distributioncompact modelcircuit simulationSPICE
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Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design
Norio SADACHIKA Shu MIMURA Akihiro YUMISAKI Kou JOHGUCHI Akihiro KAYA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/03/01
Vol. E94-C  No. 3  pp. 361-367
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
circuit simulationcompact modelDFMreliability
 Summary | Full Text:PDF

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/06/01
Vol. E92-C  No. 6  pp. 777-784
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
accumulation-modeMOS varactorcarrier-transit delaynonquasi-static effectcompact modelsurface potentialcircuit simulationLC-VCOfrequency-tuning rangeFTRoscillation amplitude
 Summary | Full Text:PDF

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
carrier dynamicslow voltagedisplacement currentcontinuity equationcarrier-transit delaynonquasi-static effectcompact MOSFET modeldriving capabilitydriftdiffusionsurface potentialcircuit simulation
 Summary | Full Text:PDF

A PN Junction-Current Model for Advanced MOSFET Technologies
Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2009/04/01
Vol. E92-A  No. 4  pp. 983-989
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
HiSIMPN junction currentdiode currentsurface potential
 Summary | Full Text:PDF

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8  pp. 1379-1381
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
double gate MOSFETHiSIMcircuit simulationvolume inversion
 Summary | Full Text:PDF

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition
Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 885-894
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETshot noisehigh frequency noisedevice simulationsub-threshold current
 Summary | Full Text:PDF

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential
Dondee NAVARRO Takeshi MIZOGUCHI Masami SUETAKE Kazuya HISAMITSU Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 1079-1086
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
pinch-off regionchannel-length modulationoverlap capacitancesurface-potential-based modelingcircuit simulation
 Summary | Full Text:PDF

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2  pp. 247-254
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
100 nm-MOSFET1/f noisemeasurementmodeling
 Summary | Full Text:PDF

100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Keiichi MORIKAWA Satoshi ITOH Akiyoshi KOBAYASHI Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6  pp. 1009-1021
Type of Manuscript:  INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
MOSFET modelsurface potentialdevice phenomenaRF applications
 Summary | Full Text:PDF

Circuit-Simulation Model of Cgd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients
Dondee NAVARRO Hiroaki KAWANO Kazuya HISAMITSU Takatoshi YAMAOKA Masayasu TANAKA Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 474-480
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
gate-drain capacitancesurface-potential based modelinglateral field gradientpocket-implant technology
 Summary | Full Text:PDF

FOREWORD
Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 255-255
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

Circuit Simulation Models for Coming MOSFET Generations
Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/04/01
Vol. E85-A  No. 4  pp. 740-748
Type of Manuscript:  Special Section PAPER (Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
MOSFET modelsurface potentialcharge based modelingsub-100 nm technology
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Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations
Odin PRIGGE Masami SUETAKE Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 997-1002
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
MOSFETperformance distribution 2σanalytical model
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FOREWORD
Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 789-790
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

Unified MOSFET Model for All Channel Lengths down to Quarter Micron
Mitiko MIURA-MATTAUSCH Ulrich WEINERT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 172-180
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
analytical MOSFET modelshort-channel effectscharge-sheet modelparameter extracion
 Summary | Full Text:PDF