Meishoku MASAHARA

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System
Yasushi IGARASHI Tadashi CHIBA Shin-ichi O'UCHI Meishoku MASAHARA Kunihiro SAKAMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/03/01
Vol. E97-A  No. 3  pp. 741-748
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
voltage multiplier, RF-to-DC converter, SOI MOSFET, self-control of body bias, 
 Summary | Full Text:PDF
Independent-Double-Gate FinFET SRAM Technology
Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4  pp. 413-423
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
multi-gate devices, FinFET, SRAM, noise margin, 
 Summary | Full Text:PDF
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
Shin-ichi O'UCHI Kazuhiko ENDO Takashi MATSUKAWA Yongxun LIU Tadashi NAKAGAWA Yuki ISHIKAWA Junichi TSUKADA Hiromi YAMAUCHI Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 686-695
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
Common-Double-Gate FinFET, Independent-Double-Gate FinFET, common-mode voltage range, low voltage, differential amplifier, source follower, 
 Summary | Full Text:PDF
High-Frequency Precise Characterization of Intrinsic FinFET Channel
Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 752-760
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
FinFET, SOI, De-embedding, RF, device modeling, 
 Summary | Full Text:PDF
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
Shin-ichi O'UCHI Meishoku MASAHARA Kazuhiko ENDO Yongxun LIU Takashi MATSUKAWA Kunihiro SAKAMOTO Toshihiro SEKIGAWA Hanpei KOIKE Eiichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4  pp. 534-542
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
SRAM, FinFET, 4T-FinFET, standby power, dynamic threshold-voltage control, 
 Summary | Full Text:PDF