Masayoshi ESASHI


A 1.9GHz Low-Phase-Noise Complementary Cross-Coupled FBAR-VCO without Additional Voltage Headroom in 0.18µm CMOS Technology
Guoqiang ZHANG Awinash ANAND Kousuke HIKICHI Shuji TANAKA Masayoshi ESASHI Ken-ya HASHIMOTO Shinji TANIGUCHI Ramesh K. POKHAREL 
Publication:   
Publication Date: 2017/04/01
Vol. E100-C  No. 4  pp. 363-369
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
complementary cross-coupled VCODC latchFBAR-VCOparasitic oscillationphase noise
 Summary | Full Text:PDF(1.6MB)

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge
Yo-Tak SONG Hai-Young LEE Masayoshi ESASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/12/01
Vol. E89-C  No. 12  pp. 1880-1887
Type of Manuscript:  Special Section PAPER (Special Section on Emerging Microwave Techniques)
Category: Passive Circuits/Components
Keyword: 
low-actuation voltageRF-MEMScapacitive shunt switchmicrowave and millimeter-wavecorrugated bridgeresidual stress
 Summary | Full Text:PDF(1MB)

Temperature Compensated Piezoresistor Fabricated by High Energy Ion Implantation
Takahiro NISHIMOTO Shuichi SHOJI Kazuyuki MINAMI Masayoshi ESASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2  pp. 152-156
Type of Manuscript:  Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems)
Category: 
Keyword: 
piezoresistorion implantationtemperature compensationJFET
 Summary | Full Text:PDF(364.5KB)