Oblique Rotating Ion Implantation Simulation for the Drain Formation of Gate/N- Overlapped LDD MOSFET's Using the Monte Carlo Method
Tatsuya KUNIKIYO Masato FUJINAGA Tetsuya UCHIDA Norihiko KOTANI Yoichi AKASAKA |
Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/06/25
Vol. E74-C
No. 6
pp. 1662-1671
Type of Manuscript:
Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)
Category:
Keyword:
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