Masataka HIGASHIWAKI

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
Masataka HIGASHIWAKI Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 984-988
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
GaN, heterostructure field-effect transistors (HFETs), millimeter-wave, 
 Summary | Full Text:PDF
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAs, InP, HEMT, cutoff frequency, low-temperature fabrication process, 
 Summary | Full Text:PDF