Masashi NAGASHIMA


Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE
Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/02/25
Vol. E70-E  No. 2  pp. 121-129
Type of Manuscript:  PAPER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(759.6KB)

1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Chiaki WATANABE Yasuharu SUEMATSU Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/02/25
Vol. E69-E  No. 2  pp. 92-94
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(240.4KB)

OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate
Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU Yuichi TOHMORI Shigehisa ARAI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/12/25
Vol. E68-E  No. 12  pp. 796-797
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(151KB)

Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Kazuhito FURUYA Yasuharu SUEMATSU Chiaki WATANABE Shu-ren YANG 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/09/25
Vol. E68-E  No. 9  pp. 563-565
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(231.8KB)

Gain and Loss of GaInAsP/InP (λg1.5µm) Grown by OMVPE Estimated from Lasing Characteristics
Shu-ren YANG Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/08/25
Vol. E68-E  No. 8  pp. 521-523
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(157.7KB)