Masaru SATO


Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers
Masaru SATO Yoshitaka NIIDA Atsushi YAMADA Junji KOTANI Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Norikazu NAKAMURA 
Publication:   
Publication Date: 2021/10/01
Vol. E104-C  No. 10  pp. 480-487
Type of Manuscript:  INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
GaN power amplifierInAlGaN/GaN HEMTmillimeter-wavepower amplifiertransmission line transformerwide bandwidth
 Summary | Full Text:PDF(1.6MB)

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
Shinpei YAMASHITA Michihiko SUHARA Kenichi KAWAGUCHI Tsuyoshi TAKAHASHI Masaru SATO Naoya OKAMOTO Kiyoto ASAKAWA 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 462-465
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
backward diodesGaAsSb/InGaAsequivalent circuitvoltage sensitivity
 Summary | Full Text:PDF(2.3MB)

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifierGaN HEMTInP HEMTlow noise amplifier
 Summary | Full Text:PDF(3.8MB)

300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 528-534
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
InP HEMTsub millimeter-waveon-wafer TRL calibration
 Summary | Full Text:PDF(1.3MB)

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Vol. E98-C  No. 12  pp. 1112-1119
Type of Manuscript:  Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World)
Category: 
Keyword: 
millimeter-waveInP HEMTsfundamental mixerflip chipwaveguide modulespectrum analysis
 Summary | Full Text:PDF(1.8MB)

Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10  pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMTMillimeter-wavePower amplifierDevice modeling
 Summary | Full Text:PDF(2.1MB)

A 24 dB Gain 51–68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors
Ning LI Keigo BUNSEN Naoki TAKAYAMA Qinghong BU Toshihide SUZUKI Masaru SATO Yoichi KAWANO Tatsuya HIROSE Kenichi OKADA Akira MATSUZAWA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/02/01
Vol. E95-A  No. 2  pp. 498-505
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
asymmetric-layoutlow noise amplifiermm-Wave60 GHz
 Summary | Full Text:PDF(1.8MB)

Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager
Masaru SATO Tatsuya HIROSE Koji MIZUNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C  No. 9  pp. 1124-1129
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category: 
Keyword: 
Dicke-radiometerlow noise amplifierMMICpassive millimeter-wave imagerSPDT switch
 Summary | Full Text:PDF(474.2KB)

Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1916-1922
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
InP HEMTMUXDEMUXD-FFamplifierultra high speedoptical communication system
 Summary | Full Text:PDF(1.6MB)