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Masaru SATO

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz Shinpei YAMASHITA Michihiko SUHARA Kenichi KAWAGUCHI Tsuyoshi TAKAHASHI Masaru SATO Naoya OKAMOTO Kiyoto ASAKAWA
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 462-465 Type of Manuscript: BRIEF PAPER Category: Keyword: backward diodes, GaAsSb/InGaAs, equivalent circuit, voltage sensitivity,
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Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 417-423 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier,
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300-GHz Amplifier in 75-nm InP HEMT Technology Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 528-534 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: InP HEMT, sub millimeter-wave, on-wafer TRL calibration,
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Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/12/01 Vol. E98-C No. 12 pp. 1112-1119 Type of Manuscript: Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World) Category: Keyword: millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis,
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Millimeter-Wave GaN HEMT for Power Amplifier Applications Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/10/01 Vol. E97-C No. 10 pp. 923-929 Type of Manuscript: INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies) Category: Keyword: GaN HEMT, Millimeter-wave, Power amplifier, Device modeling,
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A 24 dB Gain 51–68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors Ning LI Keigo BUNSEN Naoki TAKAYAMA Qinghong BU Toshihide SUZUKI Masaru SATO Yoichi KAWANO Tatsuya HIROSE Kenichi OKADA Akira MATSUZAWA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2012/02/01 Vol. E95-A No. 2 pp. 498-505 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: asymmetric-layout, low noise amplifier, mm-Wave, 60 GHz,
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Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager Masaru SATO Tatsuya HIROSE Koji MIZUNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/09/01 Vol. E92-C No. 9 pp. 1124-1129 Type of Manuscript: INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications) Category: Keyword: Dicke-radiometer, low noise amplifier, MMIC, passive millimeter-wave imager, SPDT switch,
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Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 1916-1922 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: InP HEMT, MUX, DEMUX, D-FF, amplifier, ultra high speed, optical communication system,
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