Masaoki ISHIKAWA

0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs
Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 491-497
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAs, heterojunction FET, Y-shaped gate, DCFL, low supply voltage, 
 Summary | Full Text:PDF(378.8KB)
A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps
Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 512-517
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
low power, high speed, GaAs, heterojunction FET, SCFL, logic swing, low supply voltage, D-FF, 
 Summary | Full Text:PDF(698.8KB)