Masao FUKUMA


0.15 µm CMOS Devices with Reduced Junction Capacitance
Akira TANABE Kiyoshi TAKEUCHI Toyoji YAMAMOTO Takeo MATSUKI Takemitsu KUNIO Masao FUKUMA Ken NAKAJIMA Naoki AIZAKI Hidenobu MIYAMOTO Eiji IKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 267-273
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
CMOSEB lithographyTi salicideSPICE
 Summary | Full Text:PDF

Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Tohru MOGAMI Lars E. G. JOHANSSON Isami SAKAI Masao FUKUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 255-260
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
hot-carrier effectsboron penetrationsurface-channel PMOSFETsgate currentBF2
 Summary | Full Text:PDF