Masanori TSUNOTANI


The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction
Shinichi HOSHI Takayuki IZUMI Tomoyuki OHSHIMA Masanori TSUNOTANI Tamotsu KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1350-1355
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaAs/AlGaAs pseudomorphic high electron mobility transistorRIE-damagerecombination enhanced defect reaction
 Summary | Full Text:PDF

A GaAs 88 Self-Routing Switch LSI for ATM Switching System
Shouhei SEKI Hiroyuki YAMADA Masanori TSUNOTANI Yoshiaki SANO Yasushi KAWAKAMI Masahiro AKIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1127-1132
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAsB-ISDNATMhardware switch
 Summary | Full Text:PDF