Masamitsu OSHIKIRI


A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices
Toshihiko HIMENO Naohiro MATSUKAWA Hiroaki HAZAMA Koji SAKUI Masamitsu OSHIKIRI Kazunori MASUDA Kazushige KANDA Yasuo ITOH Jin-ichi MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 145-151
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
flash memoryVth distributionreliabilityNAND flashnonvolatile memory
 Summary | Full Text:PDF(806.8KB)

A 16-Mb Flash EEPROM with a New Self-Data-Refresh Scheme for a Sector Erase Operation
Shigeru ATSUMI Masao KURIYAMA Akira UMEZAWA Hironori BANBA Kiyomi NARUKE Seiji YAMADA Yoichi OHSHIMA Masamitsu OSHIKIRI Yohei HIURA Tomoko YAMANE Kuniyoshi YOSHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/05/25
Vol. E77-C  No. 5  pp. 791-799
Type of Manuscript:  Special Section PAPER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Category: 
Keyword: 
 Summary | Full Text:PDF(828.8KB)