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InP HEMT Technology for High-Speed Logic and Communications Tetsuya SUEMITSU Masami TOKUMITSU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5
pp. 917-922
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: HEMT, InP, cutoff frequency, OEIC, | | Summary | Full Text:PDF(990.1KB) | |
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BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C
No. 12
pp. 4131-4135
Type of Manuscript:
Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C
No. 12
pp. 4136-4140
Type of Manuscript:
Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
| | Summary | Full Text:PDF(412.4KB) | |
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