IEICE Trans

Masami TOKUMITSU

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform Hiroyuki FUKUYAMA Michihiro HIRATA Kenji KURISHIMA Minoru IDA Masami TOKUMITSU Shogo YAMANAKA Munehiko NAGATANI Toshihiro ITOH Kimikazu SANO Hideyuki NOSAKA Koichi MURATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/03/01 Vol. E99-C No. 3 pp. 385-396 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: transimpedance amplifier, limiting amplifier, output-stage amplifier, undershoot, ringing, RSSI,
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InP HEMT Technology for High-Speed Logic and Communications Tetsuya SUEMITSU Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 917-922 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: HEMT, InP, cutoff frequency, OEIC,
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 949-953 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency,
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A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation Hideyuki NOSAKA Makoto NAKAMURA Kimikazu SANO Minoru IDA Kenji KURISHIMA Tsugumichi SHIBATA Masami TOKUMITSU Masahiro MURAGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/06/01 Vol. E88-C No. 6 pp. 1225-1232 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Optical Keyword: analog-digital conversion, digital signal processing, equalizers, InP HBT, chromatic dispersion, polarization-mode dispersion, OC-192,
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Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology Ichihiko TOYODA Makoto HIRANO Masami TOKUMITSU Yuhki IMAI Kenjiro NISHIKAWA Kenji KAMOGAWA Suehiro SUGITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/25 Vol. E82-C No. 11 pp. 1951-1959 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: three-dimensional, MMIC, masterslice, LMDS, quick development, down-converter,
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A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 pp. 559-561 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: decision IC, GaAs MESFET, static D-FF, SCFL circuitry,
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A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/25 Vol. E80-C No. 12 pp. 1624-1627 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: decision IC, MESFET, super-dynamic D-FF, wideband amplifier,
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A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 pp. 1189-1194 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: WSiN, refractory metal, frequency divider, GaAs MESFET, BP-LDD,
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A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/08/25 Vol. E78-C No. 8 pp. 907-910 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology) Category: Keyword: WSiN, InGaP, asymmetric LDD structure, GaAs, MMIC,
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Three-Dimensional Passive Elements for Compact GaAs MMICs Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/06/25 Vol. E76-C No. 6 pp. 961-967 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions) Category: Keyword: three-dimensional, passive elements, GaAs, MMICs,
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BP-LDD n⁺ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/25 Vol. E74-C No. 12 pp. 4131-4135 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/25 Vol. E74-C No. 12 pp. 4136-4140 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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