Masami TOKUMITSU


An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform
Hiroyuki FUKUYAMA Michihiro HIRATA Kenji KURISHIMA Minoru IDA Masami TOKUMITSU Shogo YAMANAKA Munehiko NAGATANI Toshihiro ITOH Kimikazu SANO Hideyuki NOSAKA Koichi MURATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/03/01
Vol. E99-C  No. 3  pp. 385-396
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
transimpedance amplifierlimiting amplifieroutput-stage amplifierundershootringingRSSI
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InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 917-922
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
HEMTInPcutoff frequencyOEIC
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
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A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation
Hideyuki NOSAKA Makoto NAKAMURA Kimikazu SANO Minoru IDA Kenji KURISHIMA Tsugumichi SHIBATA Masami TOKUMITSU Masahiro MURAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6  pp. 1225-1232
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Optical
Keyword: 
analog-digital conversiondigital signal processingequalizersInP HBTchromatic dispersionpolarization-mode dispersionOC-192
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Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology
Ichihiko TOYODA Makoto HIRANO Masami TOKUMITSU Yuhki IMAI Kenjiro NISHIKAWA Kenji KAMOGAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1951-1959
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
three-dimensionalMMICmastersliceLMDSquick developmentdown-converter
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A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop
Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 559-561
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision ICGaAs MESFETstatic D-FFSCFL circuitry
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A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1624-1627
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision ICMESFETsuper-dynamic D-FFwideband amplifier
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A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1189-1194
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiNrefractory metalfrequency dividerGaAs MESFETBP-LDD
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A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8  pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiNInGaPasymmetric LDD structureGaAsMMIC
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Three-Dimensional Passive Elements for Compact GaAs MMICs
Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6  pp. 961-967
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
three-dimensionalpassive elementsGaAsMMICs
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BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier
Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4131-4135
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4136-4140
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
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