Masaki YOSHIMARU


The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
Hidetoshi OGIHARA Masaki YOSHIMARU Shunji TAKASE Hiroki KUROGI Hiroyuki TAMURA Akio KITA Hiroshi ONODA Madayoshi INO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 288-292
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
rugged poly Si256 Mb DRAMsFIN STC (STacked capacitor cell)transformation by ion implantation
 Summary | Full Text:PDF(850.9KB)

Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation
Kimiaki SHIMOKAWA Takashi USAMI Masaki YOSHIMARU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 473-479
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
water desorptionoxidePECVDporehot-carrierinterlayer
 Summary | Full Text:PDF(592.1KB)