Masakazu MURAGUCHI


The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Tetsuo ENDOH Masashi KAMIYANAGI Masakazu MURAGUCHI Takuya IMAMOTO Takeshi SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 743-750
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Current Controlled-MCMLMCMLVth fluctuationstabilityMTJ
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamicscollective motion of electronSi-nano dottwo-dimensional electron gastunnelingSi-nano dot type floating gate MOS capacitor
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Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 737-742
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical MOSFETquantum electron dynamicsimpuritytime-dependent schrodinger equationsource edge
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Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 563-568
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
direct tunnelingtwo-dimensional electron gaselectron dynamicsquantum dotelectron transport
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Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 552-556
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFETquantum electro-dynamicsresonant tunnelingsurrounding gatetime-dependent Schrodinger equation
 Summary | Full Text:PDF