Masakazu MURAGUCHI

The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Tetsuo ENDOH Masashi KAMIYANAGI Masakazu MURAGUCHI Takuya IMAMOTO Takeshi SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 743-750
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Current Controlled-MCML, MCML, Vth fluctuation, stability, MTJ, 
 Summary | Full Text:PDF
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor, 
 Summary | Full Text:PDF
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 737-742
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical MOSFET, quantum electron dynamics, impurity, time-dependent schrodinger equation, source edge, 
 Summary | Full Text:PDF
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 563-568
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
direct tunneling, two-dimensional electron gas, electron dynamics, quantum dot, electron transport, 
 Summary | Full Text:PDF
Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 552-556
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET, quantum electro-dynamics, resonant tunneling, surrounding gate, time-dependent Schrodinger equation, 
 Summary | Full Text:PDF