Masakatsu MIHARA


Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications
Yoshiko Matsuo IKEDA Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Masakatsu MIHARA Misao YOSHIMURA Yoshikazu TANABE Keiji OYA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7  pp. 1086-1091
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
gallium arsenidelinear power amplifiersingle voltage supplyMESFETISMETC
 Summary | Full Text:PDF(2.7MB)

A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
 Summary | Full Text:PDF(551.1KB)