Masahiro SAKAI


Effect of Impurity in Discharge Gas on High γ Properties of Newly Developed CeSrO Film for Novel Plasma Display Panel
Yasuhiro YAMAUCHI Yusuke FUKUI Yosuke HONDA Michiko OKAFUJI Masahiro SAKAI Mikihiko NISHITANI Yasushi YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11  pp. 1761-1768
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
PDPγprotective layerdischargeMgO
 Summary | Full Text:PDF

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2071-2076
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNHEMTAlNtemplate
 Summary | Full Text:PDF

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2077-2081
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNheterostructureMOVPEuniformitybowing
 Summary | Full Text:PDF