Masahiko TAKIKAWA


InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FEThigh breakdown voltagehigh operating voltagelow distortion
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Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 368-373
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
RTDHEMTSRAMnegative differential resistancedigital circuits
 Summary | Full Text:PDF