Masaharu TACHIMORI


Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
Shoichi MASUI Tatsuo NAKAJIMA Keisuke KAWAMURA Takayuki YANO Isao HAMAGUCHI Masaharu TACHIMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1263-1272
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SOIfixed oxide chargeinterface trapparasitic capacitancesubthreshold slope
 Summary | Full Text:PDF(928.4KB)

Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Makoto TAKIYAMA Susumu OHTSUKA Tadashi SAKON Masaharu TACHIMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 464-472
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
silicon dioxidedielectric breakdownmetal contaminationmagnesiumzinc
 Summary | Full Text:PDF(724.5KB)