Masafumi KATSUMATA

Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide
Katsuya SHIGA Junko KOMORI Masafumi KATSUMATA Akinobu TERAMOTO Yoji MASHIKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4  pp. 589-592
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
oxide reliability, extrinsic oxide breakdown, TDDB, thin oxide, activation energy, 
 Summary | Full Text:PDF(484.2KB)
Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure
Masafumi KATSUMATA Jun-ichi MITSUHASHI Kiyoteru KOBAYASHI Yoji MASHIKO Hiroshi KOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 206-210
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
Keyword: 
test structure, very low-level current, atto amperes, measurement technique, 
 Summary | Full Text:PDF(388.8KB)
A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs
Takahide ISHIKAWA Kenji HOSOGI Masafumi KATSUMATA Hiroyuki MINAMI Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A  No. 1  pp. 158-165
Type of Manuscript:  Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
T-Shaped gate HEMT, von Mises stress, recess depth, stress concentration, 
 Summary | Full Text:PDF(744.9KB)