Masaaki NISHIJIMA

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
Noboru NEGORO Masayuki KURODA Tomohiro MURATA Masaaki NISHIJIMA Yoshiharu ANDA Hiroyuki SAKAI Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1327-1331
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN, 
 Summary | Full Text:PDF
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2004-2009
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBT, InGaP, GaAs, ledge, capacitor, base resistance, recombination, 
 Summary | Full Text:PDF
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes
Keiichi MURAYAMA Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1379-1382
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBT, bias circuit, temperature compensation, 
 Summary | Full Text:PDF
Low Power Dissipation Single-Supply MMIC Power Amplifier for 5.8 GHz Electronic Toll Collection System
Taketo KUNIHISA Shinji YAMAMOTO Masaaki NISHIJIMA Takahiro YOKOYAMA Mitsuru NISHITSUJI Katsunori NISHII Osamu ISHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1921-1927
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
power amplifier/MMIC/ETC/SrTiO3 (STO) capacitor/single-supply, 
 Summary | Full Text:PDF