Masaaki KUZUHARA


Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
Maiko HATANO Norimasa YAFUNE Hirokuni TOKUDA Yoshiyuki YAMAMOTO Shin HASHIMOTO Katsushi AKITA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1332-1336
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN channelhigh temperatureHEMT
 Summary | Full Text:PDF(3MB)

FOREWORD
Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1211-1211
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(88.5KB)

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari CHIKAOKA Yoichi TAKAKUWA Kenji SHIOJIMA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 691-695
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNHEMTpotential barriercontact resistancetunneling current density
 Summary | Full Text:PDF(813.9KB)

FOREWORD
Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 675-675
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(60.5KB)

Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs
Takashi INOUE Yuji ANDO Kensuke KASAHARA Yasuhiro OKAMOTO Tatsuo NAKAYAMA Hironobu MIYAMOTO Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2065-2070
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN heterojunction FETshort channeldelay-time analysisseries resistanceelectron high-field velocity
 Summary | Full Text:PDF(1.3MB)

High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
Akio WAKEJIMA Kazuki OTA Kohji MATSUNAGA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2041-2045
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
field-modulating plateInGaPfield effect transistor (FET)intermodulation distortion
 Summary | Full Text:PDF(516.6KB)

Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance
Isao TAKENAKA Hidemasa TAKAHASHI Kazunori ASANO Kohji ISHIKURA Junko MORIKAWA Hiroaki TSUTSUI Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
AlGaAs/GaAs HFETpower amplifierdistortionIM3NPRbias circuitpush-pull
 Summary | Full Text:PDF(394.8KB)

FOREWORD
Yasushi ITOH Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 677-678
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(123.8KB)

Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 746-750
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FEThigh breakdown voltageburied gate
 Summary | Full Text:PDF(474.3KB)

Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FETpower devicelow-voltage operationpower-added efficiencypersonal digital cellularadjacent channel leakage power
 Summary | Full Text:PDF(357.5KB)

DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's
Kazuhiko ONDA Hideo TOYOSHIMA Masaaki KUZUHARA Norihiko SAMOTO Emiko MIZUKI Yoichi MAKINO Tomohiro ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4114-4118
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF(747.9KB)

Gunn Domain Dynamics in Power GaAs MESFETs
Masaaki KUZUHARA Tomohiro ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4147-4151
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF(416.8KB)