IEICE Trans

Masaaki KUZUHARA

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si Taketoshi TANAKA Norikazu ITO Shinya TAKADO Masaaki KUZUHARA Ken NAKAHARA
Publication: Publication Date: 2020/04/01 Vol. E103-C No. 4 pp. 186-190 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: AlGaN/GaN HFETs, deep donor, deep acceptor, GaN, semi-insulating,
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Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures Maiko HATANO Norimasa YAFUNE Hirokuni TOKUDA Yoshiyuki YAMAMOTO Shin HASHIMOTO Katsushi AKITA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1332-1336 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: AlGaN channel, high temperature, HEMT,
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FOREWORD Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 pp. 1211-1211 Type of Manuscript: FOREWORD Category: Keyword:
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Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures Hironari CHIKAOKA Yoichi TAKAKUWA Kenji SHIOJIMA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 691-695 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: GaN, HEMT, potential barrier, contact resistance, tunneling current density,
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FOREWORD Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 675-675 Type of Manuscript: FOREWORD Category: Keyword:
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Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs Takashi INOUE Yuji ANDO Kensuke KASAHARA Yasuhiro OKAMOTO Tatsuo NAKAYAMA Hironobu MIYAMOTO Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2065-2070 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN heterojunction FET, short channel, delay-time analysis, series resistance, electron high-field velocity,
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High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate Akio WAKEJIMA Kazuki OTA Kohji MATSUNAGA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/12/01 Vol. E85-C No. 12 pp. 2041-2045 Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology) Category: Keyword: field-modulating plate, InGaP, field effect transistor (FET), intermodulation distortion,
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Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance Isao TAKENAKA Hidemasa TAKAHASHI Kazunori ASANO Kohji ISHIKURA Junko MORIKAWA Hiroaki TSUTSUI Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/05/25 Vol. E82-C No. 5 pp. 730-736 Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits) Category: Keyword: AlGaAs/GaAs HFET, power amplifier, distortion, IM3, NPR, bias circuit, push-pull,
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FOREWORD Yasushi ITOH Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/05/25 Vol. E82-C No. 5 pp. 677-678 Type of Manuscript: FOREWORD Category: Keyword:
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Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 pp. 746-750 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: heterojunction FET, high breakdown voltage, buried gate,
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Power Heterojunction FETs for Low-Voltage Digital Cellular Applications Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 pp. 1241-1245 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: heterojunction FET, power device, low-voltage operation, power-added efficiency, personal digital cellular, adjacent channel leakage power,
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DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's Kazuhiko ONDA Hideo TOYOSHIMA Masaaki KUZUHARA Norihiko SAMOTO Emiko MIZUKI Yoichi MAKINO Tomohiro ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/25 Vol. E74-C No. 12 pp. 4114-4118 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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Gunn Domain Dynamics in Power GaAs MESFETs Masaaki KUZUHARA Tomohiro ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/25 Vol. E74-C No. 12 pp. 4147-4151 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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