Martin BARTELS


Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Christoph JUNGEMANN Stefan KEITH Martin BARTELS Bernd MEINERZHAGEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 870-879
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
siliconfull-band Monte Carlomicroscopic relaxation timevelocity overshootimpact ionizationdrift-diffusiondeep submicron NMOSFET
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