Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C
No. 6
pp. 870-879
Type of Manuscript:
INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category:
Keyword:
silicon, full-band Monte Carlo, microscopic relaxation time, velocity overshoot, impact ionization, drift-diffusion, deep submicron NMOSFET, |