Makoto YABUUCHI

An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM
Mitsuhiko IGARASHI Yuuki UCHIDA Yoshio TAKAZAWA Makoto YABUUCHI Yasumasa TSUKAMOTO Koji SHIBUTANI Kazutoshi KOBAYASHI 
Publication:   
Publication Date: 2021/11/01
Vol. E104-A  No. 11  pp. 1536-1545
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Systems)
Category: 
Keyword: 
local BTI variation, Ring-Oscillator, 7nm FinFET, SRAM Vmin, 
 Summary | Full Text:PDF
A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation
Yohei NAKATA Yuta KIMI Shunsuke OKUMURA Jinwook JUNG Takuya SAWADA Taku TOSHIKAWA Makoto NAGATA Hirofumi NAKANO Makoto YABUUCHI Hidehiro FUJIWARA Koji NII Hiroyuki KAWAI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C  No. 4  pp. 332-341
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
design for robustness, cache, variation tolerance, 7T/14T SRAM, 
 Summary | Full Text:PDF
Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process
Kimihiro SASAKI Kentaro KAWAI Tatsuhiro HASU Makoto YABUUCHI Tomonobu HATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/02/01
Vol. E87-C  No. 2  pp. 218-222
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
Category: 
Keyword: 
reactive sputtering, gate insulator, ZrO2, high-k, 
 Summary | Full Text:PDF