High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation
Kun-Ming CHEN Guo-Wei HUANG Li-Hsin CHANG Hua-Chou TSENG Tsun-Lai HSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 720-725
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
high-frequencySiGeheterojunction bipolar transistorpulsed measurementself-heating effect
 Summary | Full Text:PDF