Laurence CONSIDINE


Prospective for Gallium Nitride-Based Optical Waveguide Modulators
Arnaud STOLZ Laurence CONSIDINE Elhadj DOGHECHE Didier DECOSTER Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1363-1368
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium-nitrideelectro-opticoptical waveguideoptoelectronics
 Summary | Full Text:PDF(2MB)

DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium NitrideSchottky diodevaractormultiplier
 Summary | Full Text:PDF(1.4MB)

Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlNAlN/GaN MISFETAlN/GaN HFETwide-bandgapfrequency-dispersion
 Summary | Full Text:PDF(1MB)