Kyu-Hwan SHIM


Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
Hoon-Ki LEE S.V. Jagadeesh CHANDRA Kyu-Hwan SHIM Jong-Won YOON Chel-Jong CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 846-849
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Ta2O5MOSflat band voltageeffective metal workfunctionEOT
 Summary | Full Text:PDF

Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
A-Ram CHOI Sang-Sik CHOI Byung-Guan PARK Dongwoo SUH Gyungock KIM Jin-Tae KIM Jin-Soo CHOI Deok-Ho CHO Tae-Hyun HAN Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 767-771
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SiGeSEGaspect ratioRPCVD
 Summary | Full Text:PDF

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel
Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 716-720
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SiGeMOSFETPD SOIstress effect
 Summary | Full Text:PDF