Kuang SHENG


Current Status and Future Prospects of SiC Power JFETs and ICs
Jian H. ZHAO Kuang SHENG Yongxi ZHANG Ming SU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1031-1041
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
silicon carbide (SiC)junction field-effect transistor (JFET)power integrated circuitsnormally offhigh temperature electronics
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