Kouichi HASEGAWA


High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station
Kouji ISHIKURA Isao TAKENAKA Hidemasa TAKAHASHI Kouichi HASEGAWA Kazunori ASANO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 923-928
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
heterojunction FETshigh-voltage operationpower amplifiersfield-modulating-plate
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Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process
Noriharu SUEMATSU Masayoshi ONO Shunji KUBO Mikio UESUGI Kouichi HASEGAWA Kenji HIROSHIGE Yoshitada IYAMA Tadashi TAKAGI Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 692-698
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
distortionlow noiseBJTCMOSmobile communicationSi-MMIC
 Summary | Full Text:PDF