Koji SUZUKI


FOREWORD
Jonathan TURNER Achille PATTAVINA Tokuhiro KITAMI Iwao SASASE Kenji NAKAGAWA Toshikane ODA Akira HAKATA Takahiko KOZAKI Koji SUZUKI Naoaki YAMANAKA 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 1998/02/25
Vol. E81-B  No. 2  pp. 117-119
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(343.9KB)

Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 459-463
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
ion implantationcharge-upelectron showeroxidedielectric breakdown
 Summary | Full Text:PDF(507.1KB)

Half-Micron LOCOS Isolation Using High Energy Ion Implantation
Koji SUZUKI Kazunobu MAMENO Hideharu NAGASAWA Atsuhiro NISHIDA Hideaki FUJIWARA Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 972-977
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ion implantationLOCOSisolationchannel stopITF
 Summary | Full Text:PDF(519.5KB)

Diffusion of Phosphorus in Poly/Single Crystalline Silicon
Hideaki FUJIWARA Hideharu NAGASAWA Atsuhiro NISHIDA Koji SUZUKI Kazunobu MAMENO Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 995-1000
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ion implantationphosphorusdiffusionpolycrystalline silicon
 Summary | Full Text:PDF(594.9KB)