Koji SAKUI


Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 557-562
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET3D structured deviceMOSFETLSI
 Summary | Full Text:PDF

Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 534-539
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
FinFEThalo I/IMOSFETthreshold voltage roll-offS-factor
 Summary | Full Text:PDF

A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices
Toshihiko HIMENO Naohiro MATSUKAWA Hiroaki HAZAMA Koji SAKUI Masamitsu OSHIKIRI Kazunori MASUDA Kazushige KANDA Yasuo ITOH Jin-ichi MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 145-151
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
flash memoryVth distributionreliabilityNAND flashnonvolatile memory
 Summary | Full Text:PDF

Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1287-1295
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
flash EEPROMdata retentionendurancetunnel oxideelectron traps
 Summary | Full Text:PDF

Sub-Halfmicron Flash Memory Technologies
Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1251-1259
Type of Manuscript:  INVITED PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
magnetic memorycore memoryEEPROMflash memoryNAND EEPROM
 Summary | Full Text:PDF

Reviews and Prospects of Non-Volatile Semiconductor Memories
Fujio MASUOKA Riichiro SHIROTA Koji SAKUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/04/25
Vol. E74-C  No. 4  pp. 868-874
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: ROM
Keyword: 
 Summary | Full Text:PDF

Improvement of Vcc Margin in a Reference Voltage Generator for Megabit DRAMs
Takayuki KOBAYASHI Koji SAKUI Masaki MOMODOMI Sadayuki YOKOYAMA Yasuo ITOH Mitsugi OGURA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 270-271
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
Keyword: 
 Summary | Full Text:PDF