Koji NII


A Cost-Effective 1T-4MTJ Embedded MRAM Architecture with Voltage Offset Self-Reference Sensing Scheme for IoT Applications
Masanori HAYASHIKOSHI Hiroaki TANIZAKI Yasumitsu MURAI Takaharu TSUJI Kiyoshi KAWABATA Koji NII Hideyuki NODA Hiroyuki KONDO Yoshio MATSUDA Hideto HIDAKA 
Publication:   
Publication Date: 2019/04/01
Vol. E102-C  No. 4  pp. 287-295
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
nonvolatile memorymagnetic memorymemory architecture
 Summary | Full Text:PDF

A 28-nm 484-fJ/writecycle 650-fJ/readcycle 8T Three-Port FD-SOI SRAM for Image Processor
Haruki MORI Yohei UMEKI Shusuke YOSHIMOTO Shintaro IZUMI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/08/01
Vol. E99-C  No. 8  pp. 901-908
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power and High-Speed Chips)
Category: 
Keyword: 
image memorymulti-port SRAM8TFD-SOI28-nmmajority logic
 Summary | Full Text:PDF

A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation
Yohei NAKATA Yuta KIMI Shunsuke OKUMURA Jinwook JUNG Takuya SAWADA Taku TOSHIKAWA Makoto NAGATA Hirofumi NAKANO Makoto YABUUCHI Hidehiro FUJIWARA Koji NII Hiroyuki KAWAI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C  No. 4  pp. 332-341
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
design for robustnesscachevariation tolerance7T/14T SRAM
 Summary | Full Text:PDF

Multiple-Cell-Upset Tolerant 6T SRAM Using NMOS-Centered Cell Layout
Shusuke YOSHIMOTO Shunsuke OKUMURA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2013/07/01
Vol. E96-A  No. 7  pp. 1579-1585
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsoft error rate (SER)multiple cell upset (MCU)neutron particletwin welltriple well
 Summary | Full Text:PDF

Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process
Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Koji NII Masahiko YOSHIMOTO Hiroshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/08/01
Vol. E95-A  No. 8  pp. 1359-1365
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsingle-event upset (SEU)bit error rate (BER)soft error rate (SER)neutron particlealpha particle
 Summary | Full Text:PDF

Evaluation of SRAM-Core Susceptibility against Power Supply Voltage Variation
Takuya SAWADA Taku TOSHIKAWA Kumpei YOSHIKAWA Hidehiro TAKATA Koji NII Makoto NAGATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 586-593
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAMImmunityOn chip monitoringBuilt-in self testing
 Summary | Full Text:PDF

Analytical Model of Static Noise Margin in CMOS SRAM for Variation Consideration
Hirofumi SHINOHARA Koji NII Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/09/01
Vol. E91-C  No. 9  pp. 1488-1500
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SRAMmemory cellstatic noise marginSNMvariability
 Summary | Full Text:PDF

A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology
Masako FUJII Koji NII Hiroshi MAKINO Shigeki OHBAYASHI Motoshige IGARASHI Takeshi KAWAMURA Miho YOKOTA Nobuhiro TSUDA Tomoaki YOSHIZAWA Toshikazu TSUTSUI Naohiko TAKESHITA Naofumi MURATA Tomohiro TANAKA Takanari FUJIWARA Kyoko ASAHINA Masakazu OKADA Kazuo TOMITA Masahiko TAKEUCHI Shigehisa YAMAMOTO Hiromitsu SUGIMOTO Hirofumi SHINOHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8  pp. 1338-1347
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures (ICMTS2007))
Category: 
Keyword: 
large-scale integrationlogic circuit fault diagnosisSRAMyield optimization
 Summary | Full Text:PDF

A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing
Hiroki NOGUCHI Yusuke IGUCHI Hidehiro FUJIWARA Shunsuke OKUMURA Yasuhiro MORITA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4  pp. 543-552
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
8T SRAM cell10T SRAM celllow-power SRAMnon-precharge SRAMtwo-port SRAMvideo processing
 Summary | Full Text:PDF

Area Comparison between 6T and 8T SRAM Cells in Dual-Vdd Scheme and DVS Scheme
Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2007/12/01
Vol. E90-A  No. 12  pp. 2695-2702
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Memory Design and Test
Keyword: 
6T SRAM cell8T SRAM cellVth variation
 Summary | Full Text:PDF

Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes
Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10  pp. 1949-1956
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market)
Category: Next-Generation Memory for SoC
Keyword: 
6T SRAM cell8T SRAM cellVth variation
 Summary | Full Text:PDF

A 0.3-V Operating, Vth-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond
Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Kentaro KAWAKAMI Junichi MIYAKOSHI Shinji MIKAMI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2006/12/01
Vol. E89-A  No. 12  pp. 3634-3641
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: VLSI Architecture
Keyword: 
SRAMDVSVth-variation-tolerantlow power
 Summary | Full Text:PDF

A Low-Power Microcontroller with Body-Tied SOI Technology
Hisakazu SATO Yasuhiro NUNOMURA Niichi ITOH Koji NII Kanako YOSHIDA Hironobu ITO Jingo NAKANISHI Hidehiro TAKATA Yasunobu NAKASE Hiroshi MAKINO Akira YAMADA Takahiko ARAKAWA Toru SHIMIZU Yuichi HIRANO Takashi IPPOSHI Shuhei IWADE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4  pp. 563-570
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
low powerhigh speedmicrocontrollerSOI
 Summary | Full Text:PDF

Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation
Yasumasa TSUKAMOTO Tatsuya KUNIKIYO Koji NII Hiroshi MAKINO Shuhei IWADE Kiyoshi ISHIKAWA Yasuo INOUE Norihiko KOTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 439-446
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
embedded SRAMscaling merit3-dimensional interconnect simulation50 and 70 nm technology nodes
 Summary | Full Text:PDF

A CAD-Compatible SOI-CMOS Gate Array Using 0.35µm Partially-Depleted Transistors
Kimio UEDA Koji NII Yoshiki WADA Shigenobu MAEDA Toshiaki IWAMATSU Yasuo YAMAGUCHI Takashi IPPOSHI Shigeto MAEGAWA Koichiro MASHIKO Yasutaka HORIBA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C  No. 2  pp. 205-211
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
SOICMOSfield-shield isolationgate arraylow-powerhigh-speed
 Summary | Full Text:PDF