Koji ERIGUCHI


Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
Koji ERIGUCHI Masatoshi ARAI Yukiharu URAOKA Masafumi KUBOTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 261-266
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
MOSFETtransconductanceSi-SiO2 interface statecharge-to-breakdownantenna effect
 Summary | Full Text:PDF

Evaluation of Plasma Damage to Gate Oxide
Yukiharu URAOKA Koji ERIGUCHI Tokuhiko TAMAKI Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
QBDgate oxideplasmareliabilitydamagephoton emissionLOCOSthinning
 Summary | Full Text:PDF