Koji AKAHANE


High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 577-581
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
intergrated electronicsbipolar transistorLSIselective epitaxyself-alignmentSIC
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