Kohki HIKOSAKA


High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
 Summary | Full Text:PDF

0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA Tamio SAITO Hideyuki OIKAWA Yoji OHASHI Yuji AWANO Masayuki ABE Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 876-881
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-waveMMICHEMTInGaPlow noise amplifier
 Summary | Full Text:PDF

N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1165-1171
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMTInGaAsSchottky junctionDCELdry etching
 Summary | Full Text:PDF