Kimiyoshi YAMASAKI


Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Tadayoshi DEGUCHI Hideshi TOMITA Atsushi KAMADA Manabu ARAI Kimiyoshi YAMASAKI Takashi EGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1343-1347
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETscurrent collapsefield plateon-resistance
 Summary | Full Text:PDF(2.8MB)

Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF(781KB)

A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1189-1194
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiNrefractory metalfrequency dividerGaAs MESFETBP-LDD
 Summary | Full Text:PDF(545.5KB)

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8  pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiNInGaPasymmetric LDD structureGaAsMMIC
 Summary | Full Text:PDF(474.1KB)

Asynchronous Transfer Mode Switching LSI Chips with 10-Gb/s Serial I/O Ports
Shigeki HINO Minoru TOGASHI Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/06/25
Vol. E78-C  No. 6  pp. 596-600
Type of Manuscript:  Special Section PAPER (Special Issue on the 1994 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol. 30, No. 4 April 1995))
Category: 
Keyword: 
 Summary | Full Text:PDF(449KB)

A 20 GHz Band Monolithic Low Noise Amplifier Using GaAs ADVANCED SAINT-FET
Masahiro MURAGUCHI Takatomo ENOKI Kimiyoshi YAMASAKI Kuniki OHWADA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 326-328
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Microwave Circuits
Keyword: 
 Summary | Full Text:PDF(374.1KB)