Kimihiro SASAKI

Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process
Kimihiro SASAKI Kentaro KAWAI Tatsuhiro HASU Makoto YABUUCHI Tomonobu HATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/02/01
Vol. E87-C  No. 2  pp. 218-222
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
reactive sputteringgate insulatorZrO2high-k
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Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT
Kimihiro SASAKI Masatoshi MORIKAWA Seijiro FURUKAWA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 241-242
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
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