Kentaro SHIBAHARA


Gate-Extension Overlap Control by Sb Tilt Implantation
Kentaro SHIBAHARA Nobuhide MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 973-977
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
MOSFETextensiongateoverlaptilt implantationSb
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Ultra-Shallow Junction Formation with Antimony Implantation
Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1091-1097
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
shallow junctionantimonydopant lossdopant pile-upsheet resistance
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Fabrication of 100 nm Width Fine Active-Region Using LOCOS Isolation
Daisuke NOTSU Naoya IKECHI Yasuyuki AOKI Nobuyuki KAWAKAMI Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1119-1124
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
LOCOSjunction leakage currentPSLisolationbird's beak
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A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETlow temperaturevelocity overshootSbnonsteady-stationary effectimpact ionizationhot-carrier
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