Kenji SHIRAISHI


Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10  pp. 928-933
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MONOSarchive memoriescharge trap memoriesfirst principals calculation
 Summary | Full Text:PDF(1.6MB)

Theoretical and Experimental Approaches to Select Resistive Switching Material
Takeki NINOMIYA Zhiqiang WEI Shinichi YONEDA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/01/01
Vol. E98-C  No. 1  pp. 62-64
Type of Manuscript:  BRIEF PAPER
Category: Electronic Materials
Keyword: 
Resistive switching memoryconductive filamentFirst principles calculationSIMSoxygen diffusion
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An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memoryMONOSSiNfirst principles calculationcharge trap memory
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamicscollective motion of electronSi-nano dottwo-dimensional electron gastunnelingSi-nano dot type floating gate MOS capacitor
 Summary | Full Text:PDF(1.3MB)

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 563-568
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
direct tunnelingtwo-dimensional electron gaselectron dynamicsquantum dotelectron transport
 Summary | Full Text:PDF(3.3MB)

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 955-961
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
SILCstress-induced leakage currentSiO2ultra thin silicon dioxidemean-free-pathO vacancy model
 Summary | Full Text:PDF(468.6KB)