IEICE Trans

Kenji SHIRAISHI

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI
Publication: Publication Date: 2017/10/01 Vol. E100-C No. 10 pp. 928-933 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MONOS, archive memories, charge trap memories, first principals calculation,
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Theoretical and Experimental Approaches to Select Resistive Switching Material Takeki NINOMIYA Zhiqiang WEI Shinichi YONEDA Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/01/01 Vol. E98-C No. 1 pp. 62-64 Type of Manuscript: BRIEF PAPER Category: Electronic Materials Keyword: Resistive switching memory, conductive filament, First principles calculation, SIMS, oxygen diffusion,
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An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 693-698 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: non-volatile memory, MONOS, SiN, first principles calculation, charge trap memory,
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 730-736 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor,
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Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 563-568 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: direct tunneling, two-dimensional electron gas, electron dynamics, quantum dot, electron transport,
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Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 955-961 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: SILC, stress-induced leakage current, SiO₂, ultra thin silicon dioxide, mean-free-path, O vacancy model,
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