Kenji NATORI


Scaling Limit of the MOS Transistor--A Ballistic MOSFET--
Kenji NATORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8  pp. 1029-1036
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
ballistic MOSFETscaling limitcurrent-voltage characteristicsMOSFETinjection velocity
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A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode
Kenji NATORI Nobuyuki SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Vol. E82-C  No. 9  pp. 1599-1606
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Quantum Devices and Circuits
Keyword: 
single electron transistorSETresonant tunnelingcurrent-voltage characteristicsquantum dotcurrent map
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Electrical Properties and Technological Perspectives of Thin-Film SOI MOSFETs
Makoto YOSHIMI Minoru TAKAHASHI Shigeru KAMBAYASHI Masato KEMMOCHI Hiroaki HAZAMA Tetsunori WADA Koichi KATO Hiroyuki TANGO Kenji NATORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/02/25
Vol. E74-C  No. 2  pp. 337-351
Type of Manuscript:  INVITED PAPER
Category: 
Keyword: 
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