Kenji KURISHIMA


Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage
Norihide KASHIO Takuya HOSHI Kenji KURISHIMA Minoru IDA Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 522-527
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorsInPInGaAsSbGaAsSb
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An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform
Hiroyuki FUKUYAMA Michihiro HIRATA Kenji KURISHIMA Minoru IDA Masami TOKUMITSU Shogo YAMANAKA Munehiko NAGATANI Toshihiro ITOH Kimikazu SANO Hideyuki NOSAKA Koichi MURATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/03/01
Vol. E99-C  No. 3  pp. 385-396
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
transimpedance amplifierlimiting amplifieroutput-stage amplifierundershootringingRSSI
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Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
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Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
Norihide KASHIO Kenji KURISHIMA Yoshino K. FUKAI Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1084-1090
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
InP HBTspassivation ledgereliability
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A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation
Hideyuki NOSAKA Makoto NAKAMURA Kimikazu SANO Minoru IDA Kenji KURISHIMA Tsugumichi SHIBATA Masami TOKUMITSU Masahiro MURAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6  pp. 1225-1232
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Optical
Keyword: 
analog-digital conversiondigital signal processingequalizersInP HBTchromatic dispersionpolarization-mode dispersionOC-192
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Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density
Minoru IDA Kenji KURISHIMA Noriyuki WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1923-1928
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
heterojunction bipolar transistor (HBT)indium phosphidegraded base
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Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications
Hideki KAMITSUNA Tsugumichi SHIBATA Kenji KURISHIMA Minoru IDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/07/01
Vol. E86-C  No. 7  pp. 1290-1298
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
Category: MWP Devices
Keyword: 
HPTHBToptically injection-locked oscillatormicrowave photonicsmillimeter waveoptical fiber communication
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High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2000-2006
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
InPHBTamplifierflip-flopPLL
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Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1171-1181
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBTMOVPEZn diffusionabrupt emittergraded basehot electron injectionnonequilibrium transportcurrent blocking effectlateral down-scalingemitter size effect
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Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2  pp. 186-192
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
InPInGaAsHBThigh-speedlow-power
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Theoretical Characteristics of Electron Diffraction Transistor
Kazuhito FURUYA Kenji KURISHIMA Saed SAMADI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1989/04/25
Vol. E72-E  No. 4  pp. 307-309
Type of Manuscript:  Special Section LETTER (Special Issue on 1989 Spring National Convention IEICE)
Category: Electronic Devices
Keyword: 
 Summary | Full Text:PDF

Proposal of Electron Diffraction Transistor
Kazuhito FURUYA Kenji KURISHIMA Tsuyoshi YAMAMOTO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/04/25
Vol. E71-E  No. 4  pp. 286-288
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)
Category: Semiconductor Devices and Integrated Circuits
Keyword: 
 Summary | Full Text:PDF