Kenji HIRUMA


Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential
Kensuke OGAWA Kenji HIRUMA Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1573-1578
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
GaAswhiskerradiative recombinationquantum confinement
 Summary | Full Text:PDF

AFM Characterization of GaAs/AlGaAs Waveguides
Kazuhiko HOSOMI Masataka SHIRAI Kenji HIRUMA Junji SHIGETA Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1579-1585
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
GaAswaveguidescatteringsurface roughness
 Summary | Full Text:PDF

Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires
Kenji HIRUMA Hisaya MURAKOSHI Masamitsu YAZAWA Kensuke OGAWA Satoru FUKUHARA Masataka SHIRAI Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1420-1425
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
GaAsInAsquantum wirewhiskerSTM
 Summary | Full Text:PDF

0.15 µm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value
Hidetoshi MATSUMOTO Yasunari UMEMOTO Yoshihisa OHISHI Mitsuharu TAKAHAMA Kenji HIRUMA Hiroto ODA Masaru MIYAZAKI Yoshinori IMAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1373-1378
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
GaAs hetero-FETHIGFETshort-channel effectsource resistanceK-value
 Summary | Full Text:PDF