Kenichi AGAWA


A -70 dBm-Sensitivity 522 Mbps 0.19 nJ/bit-TX 0.43 nJ/bit-RX Transceiver for TransferJetTM SoC in 65 nm CMOS
Daisuke MIYASHITA Kenichi AGAWA Hirotsugu KAJIHARA Kenichi SAMI Ichiro SETO Ryuichi FUJIMOTO Yasuo UNEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6  pp. 783-789
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
TransferJetTMDSSS-UWBroot raised cosine filterISI
 Summary | Full Text:PDF

A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/06/01
Vol. E93-C  No. 6  pp. 803-811
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
CMOS wireless transceiverBluetoothsensitivitytemperature compensationphase noiseVCO pullingMOS switchleakage current
 Summary | Full Text:PDF

A 2.4-GHz Temperature-Compensated CMOS LC-VCO for Low Frequency Drift Low-Power Direct-Modulation GFSK Transmitters
Toru TANZAWA Kenichi AGAWA Hiroyuki SHIBAYAMA Ryota TERAUCHI Katsumi HISANO Hiroki ISHIKURO Shouhei KOUSAI Hiroyuki KOBAYASHI Hideaki MAJIMA Toru TAKAYAMA Masayuki KOIZUMI Fumitoshi HATORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 490-495
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: Analog
Keyword: 
GFSKCMOS LC-VCOBluetoothdirect modulationlow power
 Summary | Full Text:PDF

Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy
Kenichi AGAWA Yoshio HASHIMOTO Kazuhiko HIRAKAWA Noriaki SAKAMOTO Toshiaki IKOMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1408-1413
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
molecular beam epitaxy(311)A GaAs substratesSi dopantδ-dopingconduction-type control
 Summary | Full Text:PDF