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Kenichi AGAWA

A -70 dBm-Sensitivity 522 Mbps 0.19 nJ/bit-TX 0.43 nJ/bit-RX Transceiver for TransferJet^TM SoC in 65 nm CMOS Daisuke MIYASHITA Kenichi AGAWA Hirotsugu KAJIHARA Kenichi SAMI Ichiro SETO Ryuichi FUJIMOTO Yasuo UNEKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/06/01 Vol. E96-C No. 6 pp. 783-789 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: TransferJet^TM, DSSS-UWB, root raised cosine filter, ISI,
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A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/06/01 Vol. E93-C No. 6 pp. 803-811 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: CMOS wireless transceiver, Bluetooth, sensitivity, temperature compensation, phase noise, VCO pulling, MOS switch, leakage current,
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A 2.4-GHz Temperature-Compensated CMOS LC-VCO for Low Frequency Drift Low-Power Direct-Modulation GFSK Transmitters Toru TANZAWA Kenichi AGAWA Hiroyuki SHIBAYAMA Ryota TERAUCHI Katsumi HISANO Hiroki ISHIKURO Shouhei KOUSAI Hiroyuki KOBAYASHI Hideaki MAJIMA Toru TAKAYAMA Masayuki KOIZUMI Fumitoshi HATORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 490-495 Type of Manuscript: Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP) Category: Analog Keyword: GFSK, CMOS LC-VCO, Bluetooth, direct modulation, low power,
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Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy Kenichi AGAWA Yoshio HASHIMOTO Kazuhiko HIRAKAWA Noriaki SAKAMOTO Toshiaki IKOMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/25 Vol. E77-C No. 9 pp. 1408-1413 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: molecular beam epitaxy, (311)A GaAs substrates, Si dopant, δ-doping, conduction-type control,
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